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300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 1 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited general description the ap2129 is a 300ma, positive voltage regulator ics fabricated by cmos process. the ap2129 provides two kinds of output voltage operation modes for setting the output voltage. fixed output voltage mode senses the output voltage on v out , adjustable output voltage mode needs two resistors as a voltage divider the ap2129 series have features of low dropout voltage, low noise, high ou tput voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. ap2129 has 1.0v, 1.2v, 1.8v, 2.6v, 2.8v, 3.0v and 3.3v fixed voltage version and 0.8v to 4.5v adjustable voltage version. the ap2129 series are av ailable in dfn-1.5x2-6 (1.0v, 1.2v, 1.8v, 2.6v, 2.8v, 3.0v, 3.3v) and sot-23- 5 (1.0v, 1.2v, 3.3v, adj) packages. features wide operating voltage: 1.8v to 6v high output voltage accuracy: 2% high ripple rejection: 65db@ f=1khz, 45db@ f=10khz low standby current: 0.1 a low quiescent current: 60 a typical low output noise: 60 vrms short current limit: 50ma over temperature protection compatible with low esr ceramic capacitor: 1 f for c in and c out excellent line/load regulation soft start time : 50 s auto discharge resistance: r ds(on) =60 applications datacom notebook computers mother board figure 1. package type of ap2129 sot-23-5 dfn-1.5x2-6
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 2 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited figure 2. pin configuration of ap2129 (top view) pin configuration k package (sot-23-5) v in gnd v out adj/nc shutdown 1 2 34 5 dn package (dfn-1.5x2-6) shutdown v in gnd v out nc nc pin description pin number pin name function dfn-1.5x2-6 sot-23-5 13v in input voltage 2 2 gnd ground 3 1 active high enable input pin. logic high=enable, logic low=shut- down 4, 5 nc no connection 5 adj/nc adjust output for adj versi on/no connection for fixed version 64v out regulated output voltage shutdown pin 1 mark 1 2 34 5 6
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 3 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited functional bl ock diagram uvlo & shutdown logic thermal shutdown foldback current limit v ref gnd shutdown adj v out v in 3m figure 3. functional block diagram of ap2129 uvlo & shutdown logic thermal shutdown foldback current limit v ref gnd shutdown nc v out v in 3m
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 4 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited circuit type package k: sot-23-5 ap2129 - tr: tape and reel ordering information adj: adj output g1: green 1.0: fixed output 1.0v 1.2: fixed output 1.2v package temperature range part number marking id packing type sot-23-5 -40 to 85 o c ap2129k- adjtrg1 gej tape & reel ap2129k-1.0trg1 gek tape & reel ap2129k-1.2trg1 gel tape & reel ap2129k-3.3trg1 gem tape & reel dfn-1.5x2-6 -40 to 85 o c ap2129dn-1.0trg1 la tape & reel ap2129dn-1.2trg1 ma tape & reel ap2129dn-1.8trg1 lb tape & reel ap2129dn-2.6trg1 mb tape & reel ap2129dn-2.8trg1 lc tape & reel ap2129dn-3.0trg1 mc tape & reel ap2129dn-3.3trg1 ld tape & reel bcd semiconductor's products, as designa ted with "g1" suffix in the part number, are rohs compliant and green. dn: dfn-1.5x2-6 1.8: fixed output 1.8v 2.6: fixed output 2.6v 2.8: fixed output 2.8v 3.0: fixed output 3.0v 3.3: fixed output 3.3v
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 5 bcd semiconductor manufacturing limited sep. 2012 rev. 1. 6 parameter symbol value unit input voltage v in 6.5 v shutdown input voltage v ce -0.3 to v in +0.3 v output current i out 450 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance (junction to ambient) ja dfn-1.5x2-6 100 o c/w sot-23-5 250 esd (human body model) esd 6000 v esd (machine model) esd 200 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in 1.8 6 v operating ambient temperature range t a -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability.
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 6 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited electrical characteristics (c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified. parameter symbol conditions min typ max unit output voltage v out v in =v out +1v, (note 2) 1ma i out 300ma 98%* v out 102%* v out v input voltage v in 1.8 6 v maximum output current i out(max) 450 ma load regulation v out /( i out* v out ) v in -v out =1v, (note 2) 1ma i out 300ma 1.5 %/a line regulation v out /( v in *v out ) v out +0.5v v in 6v, (note 2) i out =30ma 0.06 %/v dropout voltage v drop v out =1.0v, i out =300ma 800 mv v out =1.2v, i out =300ma 600 v out =1.8v, i out =300ma 600 700 v out =2.6v/2.8v/3.0v/3.3v, i out =300ma 170 300 quiescent current i q v in =v out +1v, i out = 0ma 60 90 a standby current i std v in =v out +1v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =v out +1v f=100hz 65 db f=1khz 65 db f=10khz 45 db output voltage temperature coefficient ( v out /v out ) / t i out =30ma, -40 o c t j 85 o c 100 ppm/ o c output current limit i limit v in -v out =1v, v out =0.98*v out 400 ma short current limit i short v out =0v 50 ma soft start time t up 50 s rms output noise v noise t a =25 o c, 10hz f 100khz 60 vrms shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 shutdown pull down resistance 3m thermal shutdown 165 o c thermal shutdown hysteresis 30 o c thermal resistance jc dfn-1.5x2-6 20 o c/w sot-23-5 150 ap2129-1.0/1.2/1.8/2.6/ 2.8/3.0/3.3 electrical characteristics note 2: v in =2.8v for 1.0 and 1.2 version
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 7 bcd semiconductor manufacturing limited sep. 2012 rev. 1. 6 (c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) parameter symbol conditions min typ max unit reference voltage v ref v in =1.8v 1ma i out 300ma 0.748 0.8 0.816 v input voltage v in 1.8 6 v maximum output current i out(max) 450 ma load regulation v out /( i out* v out ) v in -v out =1v, 1ma i out 300ma 1.5 %/a line regulation v out /( v in *v out ) v out +0.5v v in 6v i out =30ma 0.06 %/v quiescent current i q v in =v out +1v, i out = 0ma 60 90 a standby current i std v in =v out +1v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =v out +1v f=100hz 65 db f=1khz 65 db f=10khz 45 db output voltage temperature coefficient ( v out /v out ) / t i out =30ma, -40 o c t j 85 o c 100 ppm/ o c output current limit i limit 400 ma short current limit i short v out =0v 50 ma soft start time t up 50 s rms output noise v noise t a =25 o c, 10hz f 100khz 60 vrms shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 shutdown pull down resistance 3m thermal shutdown 165 o c thermal shutdown hysteresis 30 o c thermal resistance jc dfn-1.5x2-6 20 o c/w sot-23-5 150 electrical characteristics (continued) ap2129-adj electrical characteristics
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 8 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited typical performance characteristics figure 4. output voltage vs. output current figure 5. supply current vs. input voltage 0 50 100 150 200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (ma) t c =-40 o c t c =25 o c t c =125 o c v in =4.4v figure 6. supply current vs. output current figu re 7. supply current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 10 20 30 40 50 60 70 80 90 100 t c =25 o c v out =0.8v no load supply current ( a) input voltage(v) 0.00 0.03 0.06 0.09 0.12 0.15 0.18 0.21 0.24 0.27 0.30 40 50 60 70 80 90 100 110 120 v out =0.8v v in =1.8v t c =25 o c supply current ( a) output current (a) -40-20 0 20406080 40 42 44 46 48 50 52 54 56 58 60 v out =0.8v v in =1.8v no load supply current ( a) case temperature( o c)
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 9 bcd semiconductor manufacturing limited sep. 2012 rev. 1. 6 typical performance ch aracteristics (continued) figure 8. short current vs. case temperature f igure 9. output voltage vs. case temperature figure 10. output voltage vs. output current figure 11. output voltage vs. input voltage -30-15 0 1530456075 0 40 80 120 160 200 240 280 320 v out =0.8v v in =1.8v ouput short to gnd short current (ma) case temperature ( o c) -30-15 0 1530456075 0.70 0.72 0.74 0.76 0.78 0.80 0.82 0.84 0.86 0.88 0.90 v out =0.8v v in =1.8v output voltage (v) case temperature ( o c) i o =10ma i o =150ma 0.00 0.05 0.10 0.15 0.20 0.25 0. 30 0.35 0.40 0.45 0.50 0.55 0.60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v out =0.8v v in =1.8v output voltage (v) output current (a) t c =-40 o c t c =125 o c t c =25 o c 0.00.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v out =0.8v no load output voltage (v) input voltage(v) t c =-40 o c t c =25 o c t c =125 o c
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 10 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited figure 12. output voltage vs. input voltage 0123456 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output voltge (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c v out =0.8v typical performance ch aracteristics (continued) figure 13. load transient (conditions: c in =c out =1 f, v in =2.5v, v out =0.8v) i out v out figure 14. load transient (conditions: c in =c out =1 f, v in =4.4v, v out =3.3v) i out v out figure 15. line transient (conditions: i out =30ma, c in =c out =1 f, v in =2.5 to 3.5v, v out =0.8v) v in v out (i out =300ma)
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 11 bcd semiconductor manufacturing limited sep. 2012 rev. 1. 6 typical performance ch aracteristics (continued) figure 17. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =3.3v) v out figure 16. line transient (conditions: i out =30ma, c in =c out =1 f, v in =4 to 5v, v out =3.3v) v in v out v shutdown figure 18. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =0.8v) v out v shutdown figure 19. psrr vs. frequency 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =0.8v
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 12 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 20. psrr vs. frequency 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =3.3v figure 21. power dissipation vs. case temperature -40-20 0 20406080100120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 power dissipation (w) case temperature ( o c) v out =0.8v no heatsink
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 13 bcd semiconductor manufacturing limited sep. 2012 rev. 1. 6 typical application v out =0.8*(1+r1/r2) v v in v in v out v out shutdown gnd c out 1 f c in 1 f ap2129 v in v in v out v out adj shutdown gnd c out 1 f c in 1 f r1 r2 ap2129 v out =1.0v, 1.2v, 1.8v, 2.6v, 2.8v, 3.0v, 3.3v figure 22. typical application of ap2129
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 14 sep. 2012 rev. 1. 6 bcd semiconductor manufacturing limited mechanical dimensions dfn-1.5x2-6 unit: mm(inch) 1.424(0. 056) 1.576(0. 062) 1.924(0.076) 2.076(0.082) 0.500(0. 020) typ. 0.200(0. 008) min. 0.174(0. 007) 0.326(0. 013) 0.800(0.031) 1.000(0.039) 1.000(0. 039) 1.200(0. 047) 0.200(0. 008) 0.300(0. 012) pin 1 mark 0.350(0. 014) 0.450(0. 018) 0. 127(0.005) ref 0.000(0. 000) 0.050(0. 002 ) n1 n3 n4 n6 1 detail a pin 1 options 2 pin # 1 identification see detail a 1 2 1 2
300ma high speed, extremely low noise cmos ldo regulator ap2129 data sheet 15 bcd semiconductor manufacturing limited sep. 2012 rev. 1. 6 mechanical dimens ions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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